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Main characteristics
| Configuration and polarity | N |
| Maximum drain-source voltage | 55 IN |
| Drain current rated at 25 ° C, excluding case limits | 41 A |
| Open channel resistance at U rangeshutter(nom) | 22…35 mΩ |
| Gate rated voltage range | 4.5…10 IN |
| Maximum gate voltage | 16 IN |
| Shutter charge | 32 nCl |
| Power dissipation | 83 W |
| Note | HEXFET Power MOSFETs Discrete N-Channel |
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