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Parameters of the IRF840 bipolar transistor
- Drain-source voltage Usi (max): 500V
- Drain-source current at 25 C Isi (max): 8A
- Gate-source voltage Uzi (max): ± 20V
- Channel closed resistance Rsi: 850 mOhm
- Power dissipation Psi (max): 125W
- Slope: 4.9S
- Gate threshold voltage: 4V
- Package: TO-220AB
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